Categories

SCTW40N120G2VAG - SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H

SCTW40N120G2VAG - SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
SCTW40N120G2VAG - SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
Brand: STMicroelectronics
Product Code: SCTW40N120G2VAG
Availability: In Stock
Price: $16.5784

5 or more $14.9876
10 or more $13.8584
Qty:     - OR -   Add to Wish List
Add to Compare
 SCTW40N120G2VAG Datasheet (PDF) STMicroelectronics
Product Category: SiC MOSFETs  
RoHS:    
Through Hole
HiP-247-3
N-Channel
1 Channel
1.2 kV
36 A
100 mOhms
- 10 V, + 22 V
4.9 V
61 nC
- 55 C
+ 200 C
278 W
Enhancement
AEC-Q101
Brand: STMicroelectronics  
Country of Assembly: IT  
Country of Diffusion: Not Available  
Country of Origin: IT  
Packaging: Tube  
Product Type: SiC MOSFETS  
  600  
Subcategory: Transistors  
Technology: SiC  
Unit Weight: 4.500 g
All prices on the site are final and including VAT!