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| Product Category: | Bipolar Transistors - BJT | |
Manufacturer: NJW0281G Datasheet |
ON Semiconductor | |
| RoHS: | ||
| Mounting Style: | Through Hole | |
| Package/Case: | TO-3P-3 | |
| Transistor Polarity: | NPN | |
| Configuration: | Single | |
| Collector- Emitter Voltage VCEO Max: | 250 V | |
| Collector- Base Voltage VCBO: | 250 V | |
| Emitter- Base Voltage VEBO: | 5 V | |
| Maximum DC Collector Current: | 15 A | |
| Gain Bandwidth Product fT: | 30 MHz | |
| Maximum Operating Temperature: | + 150 C | |
| Series: | NJW0302 | |
| Brand: | ON Semiconductor | |
| DC Collector/Base Gain hFE Min: | 75 | |
| DC Current Gain hFE Max: | 75 | |
| Height: | 18.7 mm | |
| Length: | 15.6 mm | |
| Minimum Operating Temperature: | - 65 C | |
| Packaging: | Tube | |
| Pd - Power Dissipation: | 150000 mW | |
| Factory Pack Quantity: | 30 | |
| Width: | 4.8 mm | |
| Unit Weight: | 6.756 g |