IPD053N08N3GATMA1-MOSFET N-CH 80V 90A TO252-3

Brand: Infineon Technologies
Product Code: IPD053N08N3GATMA1
Availability: In Stock

Price: $2.6288

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Description

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Product Category:	MOSFET
Manufacturer: IPD053N08N3GATMA1 Datasheet	Infineon
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Number of Channels:	1 Channel
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	90 A
Rds On - Drain-Source Resistance:	4.4 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	69 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Reel
Channel Mode:	Enhancement
Brand:	Infineon Technologies
Configuration:	1 N-Channel
Fall Time:	10 ns
Forward Transconductance - Min:	56 S
Height:	2.3 mm
Length:	6.5 mm
Pd - Power Dissipation:	150 W
Rise Time:	66 ns
Factory Pack Quantity:	2500
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	38 ns
Typical Turn-On Delay Time:	18 ns
Width:	6.22 mm
Part # Aliases:	G IPD053N08N3 SP001127818
Unit Weight:	4 g