BSC016N06NSATMA1 - MOSFET N-Ch 60V 100A DSON-8 OptiMOS

Brand: Infineon Technologies
Product Code: BSC016N06NSATMA1
Availability: In Stock

Price: $2.7784

5 or more $2.4608
10 or more $2.2644
25 or more $2.1617
50 or more $2.0917
100 or more $2.0459

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Description

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Manufacturer: BSC016N06NSATMA1 Datasheet (PDF)	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	1.4 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	95 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	139 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Cut Tape
Packaging:	MouseReel
Packaging:	Reel
Configuration:	Single
Height:	1.27 mm
Length:	5.9 mm
Series:	OptiMOS 5
Transistor Type:	1 N-Channel
Width:	5.15 mm
Brand:	Infineon Technologies
Forward Transconductance - Min:	70 S
Fall Time:	9 ns
Product Type:	MOSFET
Rise Time:	9 ns
Factory Pack Quantity:	5000
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	19 ns
Part # Aliases:	BSC016N06NS SP000924882
Unit Weight:	200 mg