IRFB4227PBF - MOSFET MOSFT 200V 65A 26mOhm 70nC Qg

Brand: Infineon Technologies
Product Code: IRFB4227PBF
Availability: In Stock

Price: $2.6275

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Description

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Manufacturer: IRFB4227PBF Datasheet (PDF)	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	65 A
Rds On - Drain-Source Resistance:	24 mOhms
Vgs - Gate-Source Voltage:	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Qg - Gate Charge:	70 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	330 W
Channel Mode:	Enhancement
Packaging:	Tube
Configuration:	Single
Height:	15.65 mm
Length:	10 mm
Transistor Type:	1 N-Channel
Width:	4.4 mm
Brand:	Infineon / IR
Forward Transconductance - Min:	49 S
Fall Time:	31 ns
Product Type:	MOSFET
Rise Time:	20 ns
Factory Pack Quantity:	1000
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	33 ns
Unit Weight:	6 g