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NJW0281G-Bipolar (BJT) Transistor NPN 250V 15A 30MHz 150W Through Hole TO-3P

NJW0281G-Bipolar (BJT) Transistor NPN 250V 15A 30MHz 150W Through Hole TO-3P
NJW0281G-Bipolar (BJT) Transistor NPN 250V 15A 30MHz 150W Through Hole TO-3P
Brand: ON Semiconductor
Product Code: NJW0281G
Availability: In Stock
Price: $3.6718

5 or more $3.4426
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25 or more $3.0728
50 or more $2.9196
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Product Category: Bipolar Transistors - BJT
Manufacturer:NJW0281G Datasheet NJW0281G Datasheet ON Semiconductor
RoHS: RoHS Compliant Details  
Mounting Style: Through Hole
Package/Case: TO-3P-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 250 V
Collector- Base Voltage VCBO: 250 V
Emitter- Base Voltage VEBO: 5 V
Maximum DC Collector Current: 15 A
Gain Bandwidth Product fT: 30 MHz
Maximum Operating Temperature: + 150 C
Series: NJW0302
Brand: ON Semiconductor  
DC Collector/Base Gain hFE Min: 75  
DC Current Gain hFE Max: 75  
Height: 18.7 mm  
Length: 15.6 mm  
Minimum Operating Temperature: - 65 C  
Packaging: Tube  
Pd - Power Dissipation: 150000 mW  
Factory Pack Quantity: 30  
Width: 4.8 mm  
Unit Weight: 6.756 g
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